FJB5555 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB5555 rev. a0 1 february 2012 FJB5555 npn silicon transistor features ? high voltage switch mode application ? fast speed switching ? wide safe operating area ? suitable for electronic ballast application absolute maximum ratings* t a = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics t a = 25 c unless otherwise noted * device mounted on minimum pad size ordering information symbol parameter value units bv cbo collector-base voltage 1050 v bv ceo collector-emitter voltage 400 v bv ebo emitter-base voltage 14 v i c collector current (dc) 5 a i cp collector current (pulse) 10 a i b base current (dc) 2 a i bp collector current (pulse) 4 a t j junction temperature 150 c t stg storage junction temperature range - 55 to 150 c symbol parameter value units p d total device dissipation t a = 25c t c = 25c 1.6 100 w w r ja thermal resistance, junction to ambient 77.75 c/w r jc thermal resistance, junction to case 1.25 c/w part number marking package packing method remarks FJB5555tm j5555 d2-pak tape & reel 1.base 2.collector 3.emitter 1 d 2 -pak
FJB5555 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB5555 rev. a0 2 electrical characteristics* t a = 25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter conditions min. typ. max. units bv cbo collector-base breakdown voltage i c =500 a, i e =0 1050 v bv ceo collector-emitter breakdown voltage i c =5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e =500 a, i c =0 14 v h fe dc current gain v ce =5v, i c =10ma 10 v ce =3v, i c =0.8a 20 40 v ce (sat) collector-emitter saturation voltage i c =1a, i b =0.2a 0.17 0.5 v i c =3.5a, i b =1.0a 1.5 v v be (sat) base-emitter saturation voltage i c =3.5a, i b =1.0a 1.2 v c ob output capacitance v cb =10v, f=1mhz 45 pf t on turn on time v cc =125v, i c =0.5a i b1 =45ma, i b2 =-0.5a r l =250 1.0 s t stg storage time 1.2 s t f fall time 0.3 s t on turn on time v cc =250v, i c =2.5a i b1 =0.5a, i b2 =-1.0a r l =100 2.0 s t stg storage time 2.5 s t f fall time 0.3 s eas avalanche energy l=2mh 6 mj
FJB5555 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB5555 rev. a0 3 typical characteristics figure 1. dc current gain fi gure 2. saturation voltage figure 3. saturation voltage figure 4. resistive load switching figure 5. resistive load switching figure 6. power derating 0.01 0.1 1 10 1 10 100 v ce = 5v ta = 25 o c ta = 75 o c ta = 125 o c ta = - 25 o c h fe , dc current gain i c [a], collector current 0.1 1 10 0.1 1 i c = 5 i b ta = 25 o c ta = 75 o c ta = 125 o c ta = - 25 o c v ce(sat) [v], collector-emitter saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 ta = 125 o c ta = 75 o c ta = 25 o c ta = - 25 o c i c = 5 i b v be (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 t f t stg v cc =125v i b1 =45ma, i b2 =0.5a t stg & t f [ns], switching time i c [a], collector current 0.1 1 10 10 100 1000 10000 t f t stg v cc =250v i b1 =0.5a, i b2 =1.0a t stg & t f [ns], switching time i c [a], collector current 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 110 120 p c [w], power dissipation tc[ o c], case temperature
FJB5555 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB5555 rev. a0 4 typical characteristics (continued) figure 7. reverse bias safe operating 200 300 400 500 600 700 800 900 1000 1100 1200 0 1 2 3 4 5 6 7 8 -5v vcc = 50v v be (off) = -5v l c = 1mh ic = 4 ib i c [a], collector current v ce [v], collector-emitter voltage
FJB5555 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB5555 rev. a0 5 physical dimensions d 2 -pak dimensions in millimeters
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